首页   按字顺浏览 期刊浏览 卷期浏览 A 1.9 eV photoluminescence induced by 4 eV photons in high‐purity wet synthetic ...
A 1.9 eV photoluminescence induced by 4 eV photons in high‐purity wet synthetic silica

 

作者: A. Anedda,   G. Bongiovanni,   M. Cannas,   F. Congiu,   A. Mura,   M. Martini,  

 

期刊: Journal of Applied Physics  （AIP Available online 1993）
卷期: Volume 74, issue 11  

页码: 6993-6995

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.355053

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Photoluminescence (PL) of type III (high‐purity wet synthetic) silica excited by a XeCl excimer laser (h&ngr;=4 eV) is reported. Time‐resolved spectra show that a PL band peaked at 1.9 eV can be induced by the XeCl laser irradiation. This band exhibits a fast rise time (<20 ns) but a decay time of several microseconds. The possible mechanisms of photogeneration and photoexcitation of the defects related to this emission are discussed.

 

点击下载:  PDF (381KB)



返 回