Aluminum‐nitrogen isoelectronic trap in silicon
作者:
R. A. Modavis,
D. G. Hall,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 1
页码: 545-547
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345242
出版商: AIP
数据来源: AIP
摘要:
TheA,B,Cluminescence system from silicon is believed to originate with the radiative decay of an exciton bound to an isoelectronic trap. It was shown previously by Sauer, Weber, and Zulehner [Appl. Phys. Lett.44, 440 (1984)] that nitrogen is one of the trap constituents. We present experimental evidence that confirms that aluminum is also a trap constituent, suggesting that the trap is an aluminum‐nitrogen pair.
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