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Aluminum‐nitrogen isoelectronic trap in silicon

 

作者: R. A. Modavis,   D. G. Hall,  

 

期刊: Journal of Applied Physics  (AIP Available online 1990)
卷期: Volume 67, issue 1  

页码: 545-547

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.345242

 

出版商: AIP

 

数据来源: AIP

 

摘要:

TheA,B,Cluminescence system from silicon is believed to originate with the radiative decay of an exciton bound to an isoelectronic trap. It was shown previously by Sauer, Weber, and Zulehner [Appl. Phys. Lett.44, 440 (1984)] that nitrogen is one of the trap constituents. We present experimental evidence that confirms that aluminum is also a trap constituent, suggesting that the trap is an aluminum‐nitrogen pair.

 

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