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Cesium‐Impregnated Inert Gas Diodes

 

作者: R. Forman,   J. R. Reiss,  

 

期刊: Journal of Applied Physics  （AIP Available online 1964）
卷期: Volume 35, issue 10  

页码: 2885-2886

 

ISSN:0021-8979

 

年代: 1964

 

DOI:10.1063/1.1713123

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Thermionic diodes containing xenon at 1 Torr and cesium at 10−6−10−3Torr can lead to higher diode currents than those with either gas alone at the given pressures. Negative resistance thermionic diodes result from xenon in the appropriate pressure range plus cesium.

 

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