Mathematical modeling of focused ion beam microfabrication
作者:
R. Nassar,
M. Vasile,
W. Zhang,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 1
页码: 109-115
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.589763
出版商: American Vacuum Society
数据来源: AIP
摘要:
A mathematical model for sputtering a shape or cavity with an arbitrary cross-sectional profile has been developed for focused ion beam milling. The ion beam is assumed to have a Gaussian intensity distribution and a submicron width. The model solves for ion beam dwell times on a pixel grid which yields the desired feature depth as a function of the pixel(x,y)coordinate. The solution is unique and accounts for the ion beam flux contribution at any point from all other pixels in the address matrix. A semiempirical sputter yield treatment allows for a very wide range of ion beam/solid combinations and for yield variations with ion energy and angle of incidence. Solutions have been obtained for parabolic surfaces of revolution, a parabolic trench (with a plane of symmetry) and a hemispherical pit. Either a square or a circular pixel matrix was used for the parabolic shapes. Correspondence between the predictions of the model and experimental 20 keVGa+sputtering of a parabolic cross-section trench in Si(100) was within the limits of the accuracy of the experimental control.
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