Luminescence of porous silicon in a weak confinement regime
作者:
G. Polisski,
H. Heckler,
D. Kovalev,
M. Schwartzkopff,
F. Koch,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 8
页码: 1107-1109
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122099
出版商: AIP
数据来源: AIP
摘要:
We report on luminescence properties of porous silicon emitting efficient light only a few tens of meV above the band gap of bulk Si. This emission band has a well-defined low-energy limit coincident with the position of the lowest possible luminescing exciton state of bulk silicon. The resonant photoluminescence spectrum exhibits all possible combinations of zero-phonon and momentum-conserving TA- and TO-phonon assisted absorption and exciton emission processes known for bulk silicon. We found that TO-phonon assisted processes give a major contribution to the light emission. We discuss the implications of these studies for the understanding of the origin of porous silicon photoluminescence. ©1998 American Institute of Physics.
点击下载:
PDF
(58KB)
返 回