We report on the properties ofBa(Mg1/3Ta2/3)O3thin films prepared by the metalorganic solution deposition technique. BulkBa(Mg1/3Ta2/3)O3ceramics have shown excellent dielectric properties at microwave frequencies; however, the high sintering temperature of bulk material is the major obstacle in their use as dielectric resonators to miniaturize microwave circuits. It was possible to obtain an ordered-perovskite phase of 0.3-&mgr;m-thickBa(Mg1/3Ta2/3)O3films with trigonal symmetry at an annealing temperature of 700 °C, which is much lower than the bulk sintering temperatures. The electrical measurements were conducted onPt/Ba(Mg1/3Ta2/3)O3/Ptcapacitors. The typical measured small signal dielectric constant and dissipation factor at 100 kHz were 22.2 and 0.009, respectively. The dielectric constant of thin films was comparable to the typical values(&egr;r∼23.5–25)reported for bulk ceramics. The temperature coefficient of capacitance was −145 ppm/°C in the measured temperature range of 25–125 °C. The leakage current density was lower than10−7 A/cm2at an applied electric field of 0.5 MV/cm. The high dielectric constant, which is comparable to bulk, low dielectric loss, and good temperature and bias stability suggest the suitability ofBa(Mg1/3Ta2/3)O3thin films for microwave communications and integrated capacitor applications. ©1998 American Institute of Physics.