Characterization of GaAs and Si by a microwave photoconductance technique
作者:
K. D. Cummings,
S. J. Pearton,
G. P. Vella‐Coleiro,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 5
页码: 1676-1680
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337257
出版商: AIP
数据来源: AIP
摘要:
A nondestructive microwave photoconductance technique has been employed to investigate the uniformity of electrical transport properties in semi‐insulating, doped, or implanted GaAs. Although the measurement time is increased, the technique is also applicable to Si. A review of the advantages and limitations is discussed and some example applications to a variety of GaAs and Si structures are presented.
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