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Negative photoconductivity in high electron mobility transistors

 

作者: C. S. Chang,   H. R. Fetterman,   D. Ni,   E. Sovero,   B. Mathur,   W. J. Ho,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 51, issue 26  

页码: 2233-2235

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98950

 

出版商: AIP

 

数据来源: AIP

 

摘要:

High electron mobility transistors are sensitive to light since illumination ionizes deep donor centers and increases the drain current. In this letter the first observation of negative photoconductivity, i.e., drain current decreasing with light, will be reported. The current‐voltage characteristics were enhanced by shining white light onto the devices showing negative photoconductivity.

 

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