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Bias‐dependent photoluminescence intensities inn‐InP Schottky diodes

 

作者: Koushi Ando,   Akio Yamamoto,   Masafumi Yamaguchi,  

 

期刊: Journal of Applied Physics  （AIP Available online 1980）
卷期: Volume 51, issue 12  

页码: 6432-6434

 

ISSN:0021-8979

 

年代: 1980

 

DOI:10.1063/1.327595

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A remarkable change of the photoluminescence (PL) intensity with the variation of the dc bias voltage is observed in Au/n‐InP Schottky surface. It is found from the observation of the surface band bending that the PL intensity is dominantly affected by the surface space‐charge layer. The maximum PL intensity is found to be attained at the flat‐band bias condition.

 

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