Electrical transport coefficients were calculated for a thin, flat‐banded, nondegenerate semiconductor having spherical energy surfaces and a scalar isotropic effective mass. The conductivity, Hall coefficient, Hall mobility, and magnetoresistance were evaluated for a thin slab in terms of parametric integrals which were calculated numerically. The relaxation time of the bulk scattering mechanism was assumed to have a power law dependence on the carrier velocity. The surface scattering was assumed to be completely diffuse. The dependence of the transport coefficients on the thickness and magnetic field for a power index of one are displayed in graphical form.