首页   按字顺浏览 期刊浏览 卷期浏览 High‐Energy Light Emission from Junctions in GaAsxP1−xDiodes
High‐Energy Light Emission from Junctions in GaAsxP1−xDiodes

 

作者: N. Ainslie,   M. Pilkuhn,   H. Rupprecht,  

 

期刊: Journal of Applied Physics  （AIP Available online 1964）
卷期: Volume 35, issue 1  

页码: 105-107

 

ISSN:0021-8979

 

年代: 1964

 

DOI:10.1063/1.1713012

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Spontaneous and stimulated emission from junctions in diodes made of silicon‐doped, melt‐grown GaAsxP1−xalloys have been studied. Variations of the emission spectra as a function of current and of composition ranging up to 40 mole % GaP were examined both at room temperature and 77°K.

 

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