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Fabrication of self‐aligned GaAs/AlGaAs and GaAs/InGaP microwave power heterojunction bipolar transistors

 

作者: F. Ren,   J. R. Lothian,   S. J. Pearton,   C. R. Abernathy,   P. W. Wisk,   T. R. Fullowan,   B. Tseng,   S. N. G. Chu,   Y. K. Chen,   L. W. Yang,   S. T. Fu,   R. S. Brozovich,   H. H. Lin,   C. L. Henning,   T. Henry,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 5  

页码: 2916-2928

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587537

 

出版商: American Vacuum Society

 

关键词: TERNARY COMPOUNDS;ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;GALLIUM PHOSPHIDES;INDIUM PHOSPHIDES;HETEROJUNCTIONS;BIPOLAR TRANSISTORS;FABRICATION;CVD;ETCHING;MOLECULAR BEAM EPITAXY;ELECTRICAL PROPERTIES;GaAs;(Al,Ga)As;(In,Ga)P

 

数据来源: AIP

 

摘要:

Self‐aligned processing of high efficiency power heterojunction bipolar transistors (HBTs) using implant isolation, selective wet and dry etching for mesa formation, plasma‐enhanced chemical vapor deposited SiNxfor sidewall spacers and through‐wafer via connections is reported. GaAs/AlGaAs and GaAs/InGaP HBTs grown by metalorganic molecular beam epitaxy utilizing carbon for high, well‐confined base doping produced power‐added efficiencies of 63%, power gain of 10 dB and output power of 1.7 W at 4 GHz for twelve 2×15 μm2double‐emitter finger devices (GaAs/AlGaAs) and 57% power‐added efficiency, power gain of 11.3 dB and output power of 0.6 W at 4 GHz (GaAs/InGaP), respectively.

 

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