Modification of interfacial carrier depletion in GaAs grown by molecular beam epitaxy
作者:
C. L. Reynolds,
M. Geva,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 72,
issue 1
页码: 303-305
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.352138
出版商: AIP
数据来源: AIP
摘要:
The magnitude of carrier depletion at the interface between molecular beam epitaxial GaAs and a GaAs substrate is shown to depend upon the length of exposure to ultraviolet ozone radiation. In particular, as the ozone exposure time increases, the interfacial carbon concentration and loss of carriers at the interface decrease. The data suggest a relationship between electrically measured carrier depletion and the impurity species, carbon and silicon, at the interface.
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