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Gain characteristics of InGaN/GaN quantum well diode lasers

 

作者: Y.-K. Song,   M. Kuball,   A. V. Nurmikko,   G. E. Bulman,   K. Doverspike,   S. T. Sheppard,   T. W. Weeks,   M. Leonard,   H. S. Kong,   H. Dieringer,   J. Edmond,  

 

期刊: Applied Physics Letters  （AIP Available online 1998）
卷期: Volume 72, issue 12  

页码: 1418-1420

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.120607

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have investigated spectroscopically the gain characteristics of InGaN quantum well (QW) diode lasers. While the transparency condition can be reached at a moderate current density, the filling of localized band-edge states is a prerequisite for achieving lasing in this profoundly nonrandom alloy. ©1998 American Institute of Physics.

 

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