首页   按字顺浏览 期刊浏览 卷期浏览 Sulfur diffusion and the interstitial contribution to arsenic self‐diffusion in ...
Sulfur diffusion and the interstitial contribution to arsenic self‐diffusion in GaAs

 

作者: Masashi Uematsu,   Peter Werner,   Matthias Schultz,   Teh Y. Tan,   Ulrich M. Go¨sele,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 67, issue 19  

页码: 2863-2865

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.114810

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A quantitative determination of the contribution of As self‐interstitials to the As self‐diffusion coefficient in GaAs has been carried out. Values of the As self‐interstitial contributions are deduced from sulfur indiffusion profiles in GaAs, which are simulated based on the kick‐out mechanism. Furthermore, the relative contributions of As self‐interstitials and of As vacancies are discussed. ©1995 American Institute of Physics.

 

点击下载:  PDF (81KB)



返 回