Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement
作者:
Y. Nakamura,
D. L. Klein,
J. S. Tsai,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 2
页码: 275-277
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.115661
出版商: AIP
数据来源: AIP
摘要:
We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron‐beam fabricated Al/Al2O3/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at high temperatures up to nearly 30 K. The limit of the increase in the charging energy is attributed to the initial scattering in the junction sizes. ©1996 American Institute of Physics.
点击下载:
PDF
(351KB)
返 回