Four‐wave polarization spectroscopy of small‐gap semiconductors: Application to free carrier concentration measurements in gallium arsenide using a tunable infrared source
作者:
Ph. Kupecek,
M. Comte,
D. S. Chemla,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 38,
issue 1
页码: 44-47
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92127
出版商: AIP
数据来源: AIP
摘要:
We present a generalization of the polarization coherent anti‐Stokes Raman spectroscopy to zinc‐blende structure semiconductors. Competitive third‐order processes have been put in evidence by studying the resonant signal around the LO phonon at 292 cm−1in GaAs. Our analysis enables us to compare directly Raman and free‐carrier contributions whose concentration can be thus measured by a purely optical method.
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