Internal piezoelectric fields in GaInSb/InAs strained‐layer superlattices probed by optically induced microwave radiation
作者:
L. Xu,
X. ‐C. Zhang,
D. H. Auston,
W. I. Wang,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 27
页码: 3562-3564
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105632
出版商: AIP
数据来源: AIP
摘要:
Using a newly developed femtosecond electro‐optic technique, a built‐in electric field near a semiconductor surface can be measured by a contactless approach. We have observed for the first time equal strength but opposite direction of strain‐induced piezoelectric fields from lattice‐mismatchedAface andBface of GaInSb/InAs strained‐layer superlattices by optically induced microwave radiation.
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