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Diagnostic test for ion implantation dosimetry

 

作者: S. Matteson,   D. G. Tonn,   M.‐A. Nicolet,  

 

期刊: Journal of Vacuum Science and Technology  （AIP Available online 1979）
卷期: Volume 16, issue 3  

页码: 882-883

 

ISSN:0022-5355

 

年代: 1979

 

DOI:10.1116/1.570106

 

出版商: American Vacuum Society

 

关键词: SEMICONDUCTOR DEVICES;ION IMPLANTATION;CRYSTAL DOPING;DOSIMETRY;DIAGNOSTIC TECHNIQUES;SILICON;CRYSTALS;GOLD;FILMS;TANTALUM;FARADAY CUPS

 

数据来源: AIP

 

摘要:

A diagnostic technique is discussed and illustrated by experiment, which reveals sources of error in current integration dosimetry. The technique uses simple, specially prepared samples and an oscilloscope display of the measured current versus time.

 

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