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High‐aspect‐ratio resist pattern fabrication by alkaline surface treatment

 

作者: M. Endo,   M. Sasago,   K. Matsuoka,   N. Nomura,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1989）
卷期: Volume 7, issue 5  

页码: 1076-1079

 

ISSN:0734-211X

 

年代: 1989

 

DOI:10.1116/1.584597

 

出版商: American Vacuum Society

 

关键词: SILICON;SURFACE TREATMENTS;ETCHING;MONOLAYERS;VLSI;PHOTORESISTS;ASPECT RATIO;ALKALI METAL COMPOUNDS;photoresist

 

数据来源: AIP

 

摘要:

A new and simple high‐aspect‐ratio, single‐layer resist process for the manufacture of very large scale integration (VLSI) devices is described. Before the exposure step in the conventional process, an alkaline surface treatment is added to the positive photoresist. This treatment inhibits the dissolution of the unexposed resist layer during development, which leads to a high‐aspect‐ratio resist pattern. Excellent submicron resist patterns are obtained with a large focus latitude using this simple method.

 

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