Photocapacitance and photoconductance of Bi‐doped ZnO
作者:
J. C. Simpson,
J. F. Cordaro,
期刊:
Journal of Applied Physics
(AIP Available online 1991)
卷期:
Volume 69,
issue 7
页码: 4011-4016
ISSN:0021-8979
年代: 1991
DOI:10.1063/1.348435
出版商: AIP
数据来源: AIP
摘要:
The density of occupied interface states as a function of energy in nonohmic polycrystalline Bi‐doped ZnO was obtained using photocapacitance measurements. Peaks in the interface states’ densities were observed at depths of 2.46 and 2.79±0.08 eV from the bottom of the conduction band. The combination of these two states was found in photoconductance measurements on Bi‐doped samples of ZnO and not found in undoped samples; thus, these states were assumed to be related to interface states that arise from doping with Bi.
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