Aluminum selective area deposition on Si using diethylaluminumchloride
作者:
C. Sasaoka,
K. Mori,
Y. Kato,
A. Usui,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 8
页码: 741-743
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101792
出版商: AIP
数据来源: AIP
摘要:
Aluminum deposition on Si was studied using diethylaluminumchloride (DEAlCl) as a new Al chemical vapor deposition source. Selective area deposition was successfully achieved at substrate temperatures of 313–380 °C. The deposition rate was higher than 370 A˚/min. Reflectance and resistivity of the deposited films were comparable to those of the evaporated ones. Decomposition experiments suggest that DEAlCl catalytically decomposes on the Al surface, which would explain the high selectivity observed.
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