Epitaxial thin films of Y‐doped SrZrO3have been grown on MgO(001) by pulsed laser deposition. The deposition process has been performed at temperatures of 1000–1200 °C and at an oxygen pressure of 1.5×10−1mbar. The samples are characterized by Rutherford backscattering spectrometry/channeling (RBS/C) and x‐ray diffraction (XRD). We found an epitaxial relationship of SrZrO3(0k0) [101]∥MgO (001) [100]. Good crystalline quality is confirmed by RBS/C minimum yield values of 9% and a FWHM of 0.35° of the XRD rocking curve. ©1996 American Institute of Physics.