Electromigration behavior of aluminum films deposited on silicon by ionized cluster beam and other techniques
作者:
R. E. Hummel,
I. Yamada,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 1
页码: 18-20
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.100823
出版商: AIP
数据来源: AIP
摘要:
Electromigration experiments have been carried out on aluminum thin films which have been deposited on oxide‐free (111) silicon by employing the ‘‘ionized cluster beam’’ technique as well as other related deposition methods. It has been found that the same high electromigration resistance and film structure is obtained with or without utilizing a nozzled crucible and with or without applying ionization and acceleration voltages during deposition. The conclusions are supported by electromigration lifetime measurements, scanning electron micrographs, optical micrographs, reflective high‐energy electron diffraction, and x‐ray diffraction.
点击下载:
PDF
(363KB)
返 回