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Computer simulation of a dual gate GaAs field-effect transistor using the Monte Carlo method

 

作者: C.Moglestue,  

 

期刊: IEE Journal on Solid-State and Electron Devices  （IET Available online 1979）
卷期: Volume 3, issue 5  

页码: 133-136

 

年代: 1979

 

DOI:10.1049/ij-ssed.1979.0028

 

出版商: IEE

 

数据来源: IET

 

摘要:

TheV/Icharacteristics of a gallium arsenide dual-gate field-effect transistor have been simulated numerically, using the Monte Carlo method. The transconductances extracted from these characteristics agree with those from a real device of the same geometrical and physical description.

 

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