Phase separation in InGaN/GaN multiple quantum wells
作者:
M. D. McCluskey,
L. T. Romano,
B. S. Krusor,
D. P. Bour,
N. M. Johnson,
S. Brennan,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 14
页码: 1730-1732
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121166
出版商: AIP
数据来源: AIP
摘要:
Evidence is presented for phase separation inIn0.27Ga0.73N/GaNmultiple quantum wells. After annealing for 40 h at a temperature of 950 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of In-rich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase. A diffraction peak corresponding to an In-rich phase is also present in the annealed material. Nanoscale In-rich InGaN precipitates are observed by transmission electron microscopy and energy dispersive x-ray chemical analysis. ©1998 American Institute of Physics.
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