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Sidegating effect on Schottky contact in ion‐implanted GaAs

 

作者: J. Wu,   Z. G. Wang,   T. W. Fan,   L. Y. Lin,   M. Zhang,  

 

期刊: Journal of Applied Physics  （AIP Available online 1995）
卷期: Volume 78, issue 12  

页码: 7422-7423

 

ISSN:0021-8979

 

年代: 1995

 

DOI:10.1063/1.360399

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The sidegating effect on the Schottky barrier in ion‐implanted GaAs was investigated with capacitance‐voltage profiling at various negative substrate voltages. It was demonstrated that the negative substrate voltage modulates the Schottky depletion region width as well as the space charge region at the substrate‐active channel interface. ©1995 American Institute of Physics.

 

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