The solid phase epitaxial growth (SPEG) of amorphized Si layers implanted with Fe (1×1015cm−2, 100 keV) was investigated in the temperature range from 500 to 550 °C using Rutherford backscattering spectrometry. The push‐out of Fe atoms by the moving amorphous‐crystalline (a‐c) interface was observed during annealing, and enhancement of the recrystallization rate was induced by the presence of Fe. These results are discussed in terms of a model that assumes that Fe atoms are trapped in the amorphous layer and released when they are reached by the movinga‐cinterface during the SPEG process.