A transient photocurrent measurement with a zero-field time-of-flight configuration was carried out on ITO/ZnO/CdS(n-type)/Cu(In,Ga)Se2(p-type,Eg=1.15 eV)/Mo/glass solar cell to get the information about the minority carrier transport on theCu(In,Ga)Se2film. The transient photocurrent was recorded after the incidence of a subnanosecond pulse light (500 nm wavelength) from the back side through the Mo thin film (<0.5 &mgr;m). The analysis of the transient photocurrent was conducted by using the time-dependent diffusion current equation. Consequently, the values of1.0 cm2/s,100 ns, and103 cm/sas the diffusion coefficient, the minority carrier lifetime, and the recombination velocity in theCu(In,Ga)Se2/Mointerface, respectively, were obtained on theCu(In,Ga)Se2film. These data corresponded to the electron beam induced current line profile data, and the experimental data ofJ0,analyzed by current–voltage characteristics. ©1997 American Institute of Physics.