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Fabrication of parallel quasi‐one‐dimensional wires using a novel conformable x‐ray mask technology

 

作者: R. A. Ghanbari,   W. Chu,   E. E. Moon,   M. Burkhardt,   K. Yee,   D. A. Antoniadis,   Henry I. Smith,   M. L. Schattenburg,   K. W. Rhee,   R. Bass,   M. C. Peckerar,   M. R. Melloch,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 6  

页码: 3196-3199

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.585911

 

出版商: American Vacuum Society

 

关键词: X RADIATION;MASKING;LITHOGRAPHY;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;WIRES;ONE−DIMENSIONAL SYSTEMS;FABRICATION;DOPED MATERIALS;GaAs;(Al,Ga)As

 

数据来源: AIP

 

摘要:

We report on the fabrication of quasi‐one‐dimensional wires on modulation‐doped GaAs/AlGaAs using a novel conformable x‐ray mask technology which allows us to expose arbitrary sized samples, including samples much smaller than the membrane area, using our laboratory’s standard 31 mm‐diam silicon‐nitride x‐ray mask. After optical alignment, the sample and mask are brought into contact electrically, and then loaded into a specially designed cartridge which allows a vacuum to be pulled between mask and substrate. The vacuum causes the x‐ray mask to conform around the sample. We find that a vacuum hold down is necessary to allow easy separation of the sample from the mask with minimal risk to both.  

 

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