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Phosphorus out diffusion from double‐layered tantalum silicide/polycrystalline silicon structure

 

作者: J.‐S. Maa,   C. W. Magee,   J. J. O’Neill,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1983）
卷期: Volume 1, issue 1  

页码: 1-5

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582535

 

出版商: American Vacuum Society

 

关键词: electric conductivity;silicon;thin films;annealing;grain boundaries;tantalum silicides;phosphorus;doped materials;diffusion;sims

 

数据来源: AIP

 

摘要:

In double‐layered tantalum silicide/phosphorus‐doped silicon films, the resistivity of silicon can increase sharply by high‐temperature annealing. The increase depends on grain boundaries in the silicon films, and annealing ambient. It is not affected by the extent of interface reaction or diffusion, or the type of silicide used. A decrease in phosphorus content is due to phosphorus out diffusion from the silicon films, as determined by secondary ion mass spectrometry.

 

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