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InAs(110) by XPS

 

作者: D. M. Poirier,   J. H. Weaver,  

 

期刊: Surface Science Spectra  （AIP Available online 1993）
卷期: Volume 2, issue 3  

页码: 224-231

 

ISSN:1055-5269

 

年代: 1993

 

DOI:10.1116/1.1247703

 

出版商: American Vacuum Society

 

关键词: INDIUM ARSENIDES;PHOTOELECTRON SPECTROSCOPY;X RADIATION;MONOCRYSTALS;CLEAVAGE;SURFACE TREATMENTS;VALENCE BANDS;COMPARATIVE EVALUATIONS;CORE LEVELS

 

数据来源: AIP

 

摘要:

XPS spectra were recorded for the InAs(110) surface. For comparison, data were acquired for a sample cleavedinsitu(Accession #00107) and for a sample exposed to air for 60 min (Accession #00108). The electronic record includes the In 4d, As 3d, In 3d, AsLNN, InMNN, and the valence band region.

 

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