Calculation of the charge carrier mobility of a size quantized semiconductor film by the energy‐loss method
作者:
A. L. Vartanian,
A. A. Kirakosian,
期刊:
physica status solidi (b)
(WILEY Available online 1986)
卷期:
Volume 133,
issue 1
页码: 389-394
ISSN:0370-1972
年代: 1986
DOI:10.1002/pssb.2221330145
出版商: WILEY‐VCH Verlag
数据来源: WILEY
摘要:
AbstractAn energy‐loss‐method formalism applicable to a thin quantized film is developed. Within the frame of a self‐consistent field and taking into account the “imaginary” charges in the film surrounding regions the expression for a film dielectric function is derived and, in the long‐wavelength limit the analytical form of its imaginary part is found for a simple model of a size quantized film. Under the condition that the electron gas is nondegenerate and only the first subband is filled, the mobility is calculated, when an electron‐ionized impurity scattering is taken into account, and compared with the relevant Boltzma
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