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Suppression of the Surface Charge Limit in Strained GaAs Photocathodes

 

作者: T. Maruyama,   A. Brachmann,   J. E. Clendenin,   T. Desikan,   E. L. Garwin,   R. E. Kirby,   D.‐A. Luh,   C. Y. Prescott,   J. Turner,   R. Prepost,  

 

期刊: AIP Conference Proceedings  (AIP Available online 1903)
卷期: Volume 675, issue 1  

页码: 1083-1087

 

ISSN:0094-243X

 

年代: 1903

 

DOI:10.1063/1.1607301

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Single strained, medium‐doped (5×1018/cm3) GaAs photocathodes show the surface charge limit (SCL). The SCL poses a serious problem for operation of polarized electron sources at future linear colliders such as the NLC/JLC. A high‐gradient‐doping technique has been applied to address this problem. A 5 –7.5 nmp‐type surface layer doped to 5×1019/cm3is found sufficient to overcome the SCL, while maintaining high beam polarization. This technique can be employed to meet the charge requirements of the NLC with a polarization approaching 80&percent;. © 2003 American Institute of Physics

 

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