Suppression of the Surface Charge Limit in Strained GaAs Photocathodes
作者:
T. Maruyama,
A. Brachmann,
J. E. Clendenin,
T. Desikan,
E. L. Garwin,
R. E. Kirby,
D.‐A. Luh,
C. Y. Prescott,
J. Turner,
R. Prepost,
期刊:
AIP Conference Proceedings
(AIP Available online 1903)
卷期:
Volume 675,
issue 1
页码: 1083-1087
ISSN:0094-243X
年代: 1903
DOI:10.1063/1.1607301
出版商: AIP
数据来源: AIP
摘要:
Single strained, medium‐doped (5×1018/cm3) GaAs photocathodes show the surface charge limit (SCL). The SCL poses a serious problem for operation of polarized electron sources at future linear colliders such as the NLC/JLC. A high‐gradient‐doping technique has been applied to address this problem. A 5 –7.5 nmp‐type surface layer doped to 5×1019/cm3is found sufficient to overcome the SCL, while maintaining high beam polarization. This technique can be employed to meet the charge requirements of the NLC with a polarization approaching 80&percent;. © 2003 American Institute of Physics
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