A method for the direct calculation of primary ion and recoil range distributions, as well as energy deposition profiles in multilayered targets, is presented. The technique is based on stepwise numerical integration of the Boltzmann transport equation. Range distributions for arsenic, phosphorus, and boron and damage density distributions resulting from antimony and boron implants in silicon are found to compare favorably with other calculations and experimental results. Oxygen recoil fluxes from SiO2into Si also agree well with experiment. Silicon and nitrogen recoil range distributions resulting from a 400‐keV selenium implantation through 1000 A˚ of Si3N4on GaAs are calculated and are shown to have a significant effect on doping profiles determined from electrical measurements.