Formation of periodic structures during excimer laser‐assisted heteroepitaxy of GaP
作者:
U. Sudarsan,
R. Solanki,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 6
页码: 2913-2918
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345409
出版商: AIP
数据来源: AIP
摘要:
Periodic structures have been obtained during nominally unpolarized excimer laser (ArF)‐assisted organometallic vapor phase epitaxy of GaP on GaAs. Both crystalline properties and chemical composition of these structures have been examined. The chemical analysis showed a variation in composition across a ripple which was attributed to the modulated thermal profile due to interference.
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