Explanation for carrier removal and type conversion in irradiated silicon solar cells
作者:
T. Yamaguchi,
S. J. Taylor,
S. Watanabe,
K. Ando,
M. Yamaguchi,
T. Hisamatsu,
S. Matsuda,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 10
页码: 1226-1228
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121021
出版商: AIP
数据来源: AIP
摘要:
Heavy doses of radiation in space can cause the failure ofn+/p/p+silicon solar cells due to the gradual introduction of compensating defects into the base layer of the diode. In this letter, we show that the radiation-induced defects, which play the most important role in this process, referred to as “carrier removal,” are probably minority-carrier traps at an energy level approximately 0.18 eV below the conduction band. We conclude that these defects must be positively charged before electron capture, and therefore, act as donor centers which compensate thep-type base layer. ©1998 American Institute of Physics.
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