Se‐related deep levels in InGaAlP
作者:
Miyoko O. Watanabe,
Yasuo Ohba,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 3
页码: 1032-1037
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337393
出版商: AIP
数据来源: AIP
摘要:
Donor‐related deep levels in Se‐doped In0.5(Ga1−xAlx)0.5P (x=0.0–1.0) have been studied by DLTS,C–Vmeasurement, and photocapacitance techniques. Two donor‐related deep levels were found. The concentrations linearly increased with the donor concentration, and strongly depended on the alloy composition. These levels were found to be dominant donors in the composition range fromx=0.3 tox=1.0. They had 0.20 and 0.29 eV activation energies for electron thermal emission, 0.08 and 0.11 eV energies for electron thermal capture, and they had 0.7 and 1.1 eV energies for electron optical emission, respectively. Internally consistent configuration coordinate diagrams were proposed for these levels, suggesting that both levels are similar toDXcenters commonly found inn‐AlGaAs.
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