BaTiO3thin films with (110) preferred orientation are deposited on Si (111) substrates by radio-frequency magnetron sputtering in the temperature range 500–530°C. The crystallinity and microstructure of the films are characterized by X-ray diffraction and atomic force microscopy, respectively. The effects of process parameters such as working pressure, ratio of the flow rates of oxygen to argon, and substrate temperature on crystallization and orientation of the films are investigated. The optimum deposition process for obtaining (100)-oriented BaTiO3films is determined to be at 500°C in argon atmosphere with 5% of oxygen at a total pressure of 0.8mTorr. The (110)-oriented BaTiO3films have a dielectric constant -300 at room temperature and possess high resistivity. The differential conductivity is 5x10−3siemens/cm at zero bias and below 7.0x10−11siemens/cm at ±400kV/cm.