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Second harmonic conversion in cubic silicon carbide at 1.06 &mgr;m

 

作者: G. L. Harris,   E. W. Jones,   M. G. Spencer,   K. H. Jackson,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 59, issue 15  

页码: 1817-1819

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.106208

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In this letter, we describe second harmonic conversion in cubic silicon carbide (&bgr;‐SiC) at a wavelength of 1.06 &mgr;m. Epitaxial layers of &bgr;‐SiC formed by vapor phase growth on silicon are indeed birefringent, and thus phase matchable. Phase matched films of &bgr;‐SiC have respectable conversion efficiencies even in the presence of adsorption at 532 nm. Our measured value of the effective second order nonlinear susceptibility for &bgr;‐SiC is &khgr;(2)eff=1.05±0.3×10−9esu.

 

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