Second harmonic conversion in cubic silicon carbide at 1.06 &mgr;m
作者:
G. L. Harris,
E. W. Jones,
M. G. Spencer,
K. H. Jackson,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 15
页码: 1817-1819
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106208
出版商: AIP
数据来源: AIP
摘要:
In this letter, we describe second harmonic conversion in cubic silicon carbide (&bgr;‐SiC) at a wavelength of 1.06 &mgr;m. Epitaxial layers of &bgr;‐SiC formed by vapor phase growth on silicon are indeed birefringent, and thus phase matchable. Phase matched films of &bgr;‐SiC have respectable conversion efficiencies even in the presence of adsorption at 532 nm. Our measured value of the effective second order nonlinear susceptibility for &bgr;‐SiC is &khgr;(2)eff=1.05±0.3×10−9esu.
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