Dynamic Monte Carlo simulation for depth profiling by ion-sputter etching: Application to the AlAs/GaAs multilayered system
作者:
Hyung-Ik Lee,
Ryuichi Shimizu,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 4
页码: 2528-2531
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590203
出版商: American Vacuum Society
关键词: AlAs;GaAs
数据来源: AIP
摘要:
We present a dynamical simulation approach by Monte Carlo calculation to describe atomic mixing phenomena in depth profiling of multilayered systems. This approach is based on the binary encounter model, taking into account (1) generation of both the interstitial atoms and vacancies and (2) annihilation of the vacancies. The results indicate that the simulation describes very well the depth profiles of AlAs/GaAs multilayered systems obtained by Auger electron spectroscopy. It predicts the existence of preferential sputtering of Al in the AlAs layer, where the Auger intensity of the As(MVV—32 eV) in the AlAs layer is about 1.2 times larger than that of the GaAs layer for 0.5 keVAr+sputtering.
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