The effects of substrate bias on microwave plasma etching
作者:
Ming Jin,
Kwan C. Kao,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 2
页码: 601-610
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.586420
出版商: American Vacuum Society
关键词: ETCHING;PLASMA;ELECTRIC POTENTIAL;ELECTRON CYCLOTRON−RESONANCE;SEMICONDUCTOR MATERIALS;ELECTRICAL INSULATORS;SILICON;SILICON NITRIDES;BINARY COMPOUNDS;Si
数据来源: AIP
摘要:
The effects of substrate bias on microwave plasma etching have been theoretically analyzed, and the potentials at the surface of the semiconducting and the insulating materials being etched under a substrate bias have been derived. The computed results indicate that the etch rate increases with increasing impinging ion energy which depends strongly on the magnitude and the frequency of the substrate bias voltage. The theory correlates well with the experimental results on the electron cyclotron resonance microwave plasma etching of semiconducting Si and insulating Si3N4films under radio frequency (107Hz) substrate bias voltages.
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