Integrated picosecond photoconductors produced on bulk Si substrates
作者:
R. B. Hammond,
N. G. Paulter,
R. S. Wagner,
W. R. Eisenstadt,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 4
页码: 404-405
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95236
出版商: AIP
数据来源: AIP
摘要:
We report optoelectronic cross‐correlation measurements of the response of photoconductor pulsers and sampling gates formed on Si wafers. These photoconductors were fabricated with standard integrated circuit fabrication techniques followed by shadow‐masked ion beam irradiation. Successful ion beam irradiations were performed with 2 MeV2H, 6 MeV He, and 30 MeV O with doses of 1015ion/cm2. Deep damage was necessary to eliminate long‐lived background currents in the cross correlations. Carrier lifetimes of 96, 47, and 29 ps were observed in photoconductors with carrier mobilities of ∼250 cm2/Vs.
点击下载:
PDF
(176KB)
返 回