Silicon dioxide (SiO2)films on indium antimonide (InSb) were prepared using remote plasma enhanced chemical vapor deposition. The structural characteristics of the SiO2films and the electrical characteristics of the metal-insulator-semiconductor (MIS) structures were examined. The SiO2films, as evaluated by Auger electron spectroscopy, showed that the atomic ratio of silicon to oxygen was 0.5 and the composition was uniform throughout the oxide film. The leakage current density at 1 MV/cm was about 22 nA/cm2, the breakdown electric field of the MIS capacitor using SiO2film deposited at 105 °C was about 3.5 MV/cm, and the interface-state density at midband gap extracted from the 1 MHz capacitance-voltage measurement was about2×1011cm−2 eV−1. ©1997 American Institute of Physics.