Shrinkage and annihilation of stacking faults in silicon
作者:
Y. Sugita,
H. Shimizu,
A. Yoshinaka,
T. Aoshima,
期刊:
Journal of Vacuum Science and Technology
(AIP Available online 1977)
卷期:
Volume 14,
issue 1
页码: 44-46
ISSN:0022-5355
年代: 1977
DOI:10.1116/1.569260
出版商: American Vacuum Society
数据来源: AIP
摘要:
Shrinkage and annihilation of oxidation‐induced stacking faults in silicon have been investigated by means of combined methods of successive annealing in nitrogen atmosphere and etching technique. The shrinkage rates were measured and the activation energies for shrinkage were determined to be 4.1 and 4.9 eV for (111) and (100) surfaces, respectively. Experimental results are interpreted in terms of climbing of a Frank loop, indicating that the shrinkage process is governed by a mechanism in connection with the self‐diffusion of silicon. A novel gettering technique is proposed.
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