Rapid thermal annealing of high concentration, arsenic implanted silicon single crystals
作者:
A. Nylandsted Larsen,
S. Yu. Shiryaev,
E. Schwartz So&slash;rensen,
P. Tidemand‐Petersson,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 26
页码: 1805-1807
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96793
出版商: AIP
数据来源: AIP
摘要:
Rapid thermal annealing of arsenic implanted 〈100〉 silicon single crystals has been studied by Rutherford backscattering/channeling spectrometry, and Hall effect/resistivity measurements, combined with layer removal. Redistribution of the implanted arsenic was followed as a function of anneal time (6–60 s including temperature rise time) and implanted peak concentration (3–10×1020cm−3) at temperatures of 1050 and 1090 °C. The maximum concentration of electrically active arsenic was found to be 2–3×1020cm−3independent of anneal time and implanted peak concentration. Fast arsenic redistribution was observed to take place within the first 20 s of annealing. Complete arsenic activation occurred by means of rapid redistribution to the solubility limit.
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