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Peculiarities of charge carrier recombination at radiation defects in dislocated silicon

 

作者: L.A. Kazakevich,   P.F. Lugakov,   I.M. Filippov,   V.V. Shusha,  

 

期刊: Radiation Effects  （Taylor Available online 1985）
卷期: Volume 87, issue 1  

页码: 23-29

 

ISSN:0033-7579

 

年代: 1985

 

DOI:10.1080/01422448508205230

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The effect of dislocations on nonequilibrium charge carrier recombination in irradiated Si has been studied and the model providing satisfactory explanation of the experimental results has been proposed.

 

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