Study of novel chemical surface passivation techniques on GaAspnjunction solar cells
作者:
M. G. Mauk,
S. Xu,
D. J. Arent,
R. P. Mertens,
G. Borghs,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 3
页码: 213-215
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101012
出版商: AIP
数据来源: AIP
摘要:
Novel methods of GaAs surface passivation are investigated. Passivation is acheived by simple chemical treatments using aqueous solutions of Na2S, KOH, RuCl3, and K2Se. GaAspnhomojunction solar cells are used to evaluate the effectiveness of these passivation techniques. A significant reduction in minority‐carrier surface recombination velocity is demonstrated. In the best case, the surface recombination velocity decreased from 5×106cm/s (untreated surface) to 103cm/s. In addition, we observe improvements in solar cell photogenerated current, short wavelength spectral response, open‐circuit voltage, and junction ‘‘dark’’ current.
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