Hydrogen was incorporated into B‐dopedp‐type crystalline silicon in three different ways: boiling the sample in water, exposing the sample to hydrogen plasma, growing silicon in a hydrogen atmosphere. Al‐contact Schottky barrier diodes were made on both the hydrogenated and unhydrogenated samples. It was found that the Schottky barrier height (SBH) is increased due to the hydrogenation. The current‐voltage measurement showed an increase of 0.06–0.10 eV in the effective SBH and the activation energy measurement revealed an increase of 0.07–0.09 eV in the SBH under a forward bias of 0.15 V. If the silicon grown in a hydrogen atmosphere was thermal annealed at 650 °C to drive out hydrogen before Schottky metallization, then the SBH approached that of the unhydrogenated sample. It is demonstrated that the SBH in Al/p‐Si can be increased with hydrogen incorporated in silicon.