Characteristics of isotypenGe-nGaAs heterojunctions
作者:
J.C.De Jaeger,
G.Salmer,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1980)
卷期:
Volume 127,
issue 4
页码: 207-211
年代: 1980
DOI:10.1049/ip-i-1.1980.0042
出版商: IEE
数据来源: IET
摘要:
Isotype heterojunctions make it possible to produce new microwave devices. At present, technological problems are still important and often, there is not a full understanding of their behaviour. In the paper, the fundamental parameters ofnGe -nGaAs heterojunctions are determined from the frequency variations of their impedancesZ(ω, V). To account for the large impedance variations, a heterojunction model is proposed. By using the values of the capacitance and the parallel conductance for different frequencies, the fundamental parameters of several isotype heterojunctions are then determined. The calculated characteristics agree well with the experiment.
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